| PART |
Description |
Maker |
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| CES2307 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2314 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2312 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2302 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
| EKL |
Aluminum Electrolytic Capacitors, Radial Style, Polarized AI Electrolytic Capacitor, Extremely Long Lifetime, High Temp Range (125°C), High AC Rating
|
Vishay
|
| CZTA44-TR CZTA4410 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
|
Central Semiconductor Corp.
http://
|
| AMS3401M23RG |
Super high density cell design for Extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| CMLTA4410 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
|
Central Semiconductor Corp
|
